IKP40N65F5XKSA1

Infineon Technologies · TrenchStop® Series

Infineon TrenchStop® IGBT, IKP40N65F5XKSA1, 650 V, 74 A, 255 W, 95 nC, Through Hole, PG-TO220-3.

Infineon Technologies IKP40N65F5XKSA1
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Technical specifications

IKP40N65F5XKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchStop®
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)74 A
Current - collector pulsed120 A
Power - max255 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Gate charge95 nC
CaseTO-220-3
Test condition400V, 20A, 15Ohm, 15V
Switching energy360µJ (on), 100µJ (off)
Td (on/off) @ 25°C19ns/160ns
Vce(on) (Max) @ vge, ic2.1V @ 15V, 40A
Reverse recovery time60 ns

Technical details

650 V, 74 A TrenchStop® IGBT in TO-220-3

It is designed for hard-switching applications such as motor drives, uninterruptible power supplies, and industrial inverters where low conduction and switching losses are needed. The 95 nC gate charge keeps the gate-drive power budget modest, and the 175 °C maximum junction temperature allows operation in high-ambient enclosures or engine compartments.

Switching performance and thermal headroom

Rated at 74 A continuous collector current with a 120 A pulsed capability, this IGBT handles the inrush and overload events common in motor-start and capacitor-charging circuits. The switching energy of 360 µJ (on) and 100 µJ (off), measured at 400 V, 20 A, and 15 Ω gate resistance, gives a realistic loss figure for hard-switching topologies. The 60 ns reverse recovery time of the co-packaged diode reduces turn-on losses in the complementary switch. With a 255 W power dissipation limit and 175 °C junction rating, the designer has headroom to push switching frequency or ambient temperature as long as the thermal path to the heatsink is adequate.

Lifecycle and BOM fit

The standard TO-220-3 footprint and through-hole mounting simplify assembly and field replacement.

IKP40N65F5XKSA1
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