650 V TrenchStop 5 IGBT in TO-220
The Infineon IKP39N65ES5XKSA1 is a 650 V, 39 A TrenchStop™ 5 IGBT in a through-hole TO-220-3 package (PG-TO220-3).
Conduction and switching losses
At 15 V gate drive and 39 A collector current, the typical Vce(on) is 1.85 V — this sets the conduction loss floor for the power stage. Switching energy is 800 µJ during turn-on and 500 µJ during turn-off, measured at 400 V, 39 A, with a 12.8 Ohm gate resistor. Gate charge totals 70 nC, which keeps the driver-stage power low and allows the use of a standard gate-driver IC without a separate boost stage.
Current capability and thermal headroom
Continuous collector current is rated at 62 A, with a pulsed current capability of 120 A. Maximum power dissipation is 188 W.
