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Infineon Technologies IKFW40N65ES5XKSA1 — Discrete Semiconductors

Infineon IKFW40N65ES5XKSA1 IGBT, 650 V, 60 A, Trenchstop 5

MPNIKFW40N65ES5XKSA1
End of Life

Infineon Trenchstop™ 5 IGBT, IKFW40N65ES5XKSA1, 650 V Vces, 60 A Ic, 1.7 V Vce(on) @ 30 A, 70 nC Qg, TO-247-3, -40°C to 175°C Tj.

$6.56Ref. price · indicative, final on quote
Infineon Technologies IKFW40N65ES5XKSA1 datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesTrenchstop™ 5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IKFW40N65ES5XKSA1 specifications
ParameterValue
SeriesTrenchstop™ 5
IGBT typeTrench Field Stop
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)60 A
Current - collector pulsed120 A
Power - max106 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Gate charge70 nC
CaseTO-247-3
Test condition400V, 30A, 13Ohm, 15V
Switching energy560µJ (on), 320µJ (off)
Td (on/off) @ 25°C17ns/124ns
Vce(on) (Max) @ vge, ic1.7V @ 15V, 30A
Reverse recovery time75 ns

Product details

650 V, 60 A Trenchstop™ 5 IGBT in a TO-247-3

The Infineon IKFW40N65ES5XKSA1 is a Trenchstop™ 5 Trench Field Stop IGBT in a through-hole TO-247-3 package (PG-HSIP247-3-2). This part targets hard-switching applications such as motor drives, uninterruptible power supplies, and power-factor correction stages where conduction and switching losses need balancing.

Switching performance and gate drive

Tested at 400 V, 30 A, 13 Ω, 15 V gate drive, the part delivers 560 µJ turn-on energy and 320 µJ turn-off energy. Gate charge is 70 nC.

Thermal and environmental range

Maximum power dissipation is 106 W (case-temperature dependent). The part is ROHS3 compliant.

Frequently asked questions

What is the Vce(on) of IKFW40N65ES5XKSA1?

The typical collector-emitter saturation voltage is 1.7 V at 15 V gate drive and 30 A collector current.

What are the specifications of IKFW40N65ES5XKSA1?

The IKFW40N65ES5XKSA1 is a 650 V, 60 A Trench Field Stop IGBT in a TO-247-3 package. Key ratings: Vce(sat) 1.7 V @ 30 A, gate charge 70 nC, switching energies 560 µJ on / 320 µJ off at 400 V / 30 A / 13 Ω, operating junction temperature -40°C to 175°C.