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Infineon Technologies IKD15N60RATMA1

IKD15N60RATMA1 IGBT, 600V 30A TrenchStop™ TO-252-3

MPNIKD15N60RATMA1
End of Life

Infineon TrenchStop™ IGBT, IKD15N60RATMA1, 600V Vces, 30A Ic, 2.1V Vce(on) @ 15V/15A, 370µJ on / 530µJ off switching energy, -40°C to 175°C Tj, PG-TO252-3 surface-mount package.

$2.19Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IKD15N60RATMA1 Technical Specifications
ParameterValue
SeriesTrenchStop™
IGBT typeTrench Field Stop
Input typeStandard
Mounting typeSurface Mount
Voltage - collector emitter breakdown600 V
Current - collector (Ic)30 A
Current - collector pulsed45 A
Power - max250 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Gate charge90 nC
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Test condition400V, 15A, 15Ohm, 15V
Switching energy370µJ (on), 530µJ (off)
Td (on/off) @ 25°C16ns/183ns
Vce(on) (Max) @ vge, ic2.1V @ 15V, 15A

Product details

600 V, 30 A TrenchStop™ IGBT in a surface-mount DPak

The IKD15N60RATMA1: It uses a Trench Field Stop structure that delivers a low saturation voltage of 2.1 V typical at 15 V gate drive and 15 A collector current, keeping conduction losses manageable in a compact SMT footprint.

Switching losses that size the heatsink

Tested at 400 V, 15 A with a 15 Ω gate resistor and 15 V gate drive, the IKD15N60RATMA1 switches 370 µJ on and 530 µJ off per cycle. The 90 nC total gate charge and 16 ns turn-on delay, 183 ns turn-off delay set the minimum dead-time budget in half-bridge designs.

Package and thermal path

The PG-TO252-3 (DPak) package has the collector tab as the primary thermal path. The 250 W power dissipation rating assumes the tab is soldered to a copper plane of adequate area. Surface-mount assembly uses standard reflow profiles for the DPak footprint. The 45 A pulsed collector current capability covers inrush and short-circuit events within the IGBT's SOA.

Lifecycle and compliance

The TrenchStop™ series is Infineon's mainstream IGBT platform for industrial and automotive applications.

Frequently asked questions

Is IKD15N60RATMA1 suitable for a 600 V inverter design?

Yes. The 600 V collector-emitter breakdown voltage gives adequate margin for a 400 VDC bus (typical for 230 VAC motor drives) with 200 V of headroom for switching overshoot. The 30 A continuous rating covers drives up to about 7.5 kW in three-phase topology with proper heatsinking.

What is the difference between IKD15N60RATMA1 and IKW15N60T?

The IKD15N60RATMA1 is the surface-mount DPak (TO-252-3) variant of the same TrenchStop™ die used in the through-hole IKW15N60T (TO-247). Electrical ratings — 600 V, 30 A, 2.1 V Vce(on) — are identical; the package choice determines whether the board is reflow-assembled or wave-soldered through-hole.