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Infineon Technologies IKD06N60RC2ATMA1 — Discrete Semiconductors

Infineon IKD06N60RC2ATMA1 IGBT, 600 V, 11.7 A, TrenchStop

MPNIKD06N60RC2ATMA1
End of Life

Infineon TrenchStop IGBT, IKD06N60RC2ATMA1, 600 V, 11.7 A, 2.3 V Vce(on) @ 15 V/6 A, 31 nC gate charge, PG-TO252-3 package, -40°C to 175°C junction.

$1.19Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesTrenchStop™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IKD06N60RC2ATMA1 specifications
ParameterValue
SeriesTrenchStop™
IGBT typeTrench Field Stop
Input typeStandard
MountingSurface Mount
Voltage - collector emitter breakdown600 V
Current - collector (Ic)11.7 A
Current - collector pulsed18 A
Power - max51.7 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Gate charge31 nC
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Test condition400V, 6A, 49Ohm, 15V
Switching energy170µJ (on), 80µJ (off)
Td (on/off) @ 25°C6ns/129ns
Vce(on) (Max) @ vge, ic2.3V @ 15V, 6A
Reverse recovery time98 ns

Product details

600 V TrenchStop IGBT in a surface-mount DPAK

It is designed for medium-frequency switching applications such as motor drives, power factor correction (PFC) circuits, and general-purpose inverters where conduction and switching losses must be balanced. The Trench Field Stop structure delivers a low saturation voltage of 2.3 V typical at 15 V gate drive and 6 A collector current, combined with a tight switching energy profile of 170 µJ turn-on and 80 µJ turn-off under the standard test condition of 400 V, 6 A, 49 Ω gate resistance, and 15 V gate drive.

Switching losses and gate drive requirements

With a gate charge of 31 nC, the IKD06N60RC2ATMA1 presents a moderate load to the gate driver, suitable for both dedicated IGBT drivers and bootstrap half-bridge configurations. The turn-on delay is 6 ns and turn-off delay is 129 ns at 25°C, meaning the switching transition times are dominated by the external gate resistor and the Miller plateau. The 170 µJ turn-on and 80 µJ turn-off energies at 400 V / 6 A give a reasonable starting point for estimating dissipation at a given switching frequency — expect to derate for higher junction temperatures, as the switching losses typically increase above 125°C.

The PG-TO252-3 (DPAK) package has a tab that is electrically common with the collector. The part is ROHS3 compliant.

Frequently asked questions

What is the Vce(sat) of IKD06N60RC2ATMA1?

The typical collector-emitter saturation voltage is 2.3 V at a gate-emitter voltage of 15 V and a collector current of 6 A.

What package is IKD06N60RC2ATMA1 in?

It is supplied in the PG-TO252-3 package, also known as DPAK (TO-252), which is a surface-mount package with three leads and a collector tab.

Is IKD06N60RC2ATMA1 RoHS compliant?

Yes, the IKD06N60RC2ATMA1 is ROHS3 compliant.