600 V, 8 A TrenchStop IGBT in a surface-mount DPak
It is designed for medium-power switched-mode applications where a low on-state voltage drop and controlled switching losses are required.
Switching performance and gate drive requirements
The IKD04N60RATMA1 specifies a total gate charge of 27 nC, which sets the drive current needed from the gate driver for the target switching frequency. Switching energy is characterised at 400 V, 4 A with a 43 Ω gate resistor: 90 µJ during turn-on and 150 µJ during turn-off. These values let a designer estimate the switching-loss contribution to the total thermal budget for a given operating frequency. Turn-on delay is 14 ns and turn-off delay is 146 ns at 25°C, giving a fast enough response for hard-switched topologies up to several tens of kilohertz.
Conduction losses and thermal design
This on-state voltage directly sets the conduction loss: at 4 A, the conduction loss per IGBT is roughly 8.4 W, which must be dissipated through the DPak's exposed pad to the PCB copper. The part is rated for a pulsed collector current of 12 A, providing headroom for short-duration overloads or inrush events typical in motor-start and capacitor-charging applications.
The PG-TO252-3 (DPak) surface-mount package has two leads plus a tab that serves as the collector connection and primary thermal path.