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Infineon Technologies IKB30N65ES5ATMA1

IKB30N65ES5ATMA1 IGBT, TrenchStop 5, 650 V, 62 A, D²Pak

MPNIKB30N65ES5ATMA1
End of Life

Infineon TrenchStop™ 5 IGBT, IKB30N65ES5ATMA1, Trench Field Stop, 650 V Vce, 62 A Ic, 1.7 V Vce(on) @ 15 V, 30 A, 70 nC gate charge, 188 W max, -40 to 175 °C Tj, PG-TO263-3 (D²Pak) surface mount.

$3.95Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IKB30N65ES5ATMA1 Technical Specifications
ParameterValue
SeriesTrenchStop™ 5
IGBT typeTrench Field Stop
Input typeStandard
Mounting typeSurface Mount
Voltage - collector emitter breakdown650 V
Current - collector (Ic)62 A
Current - collector pulsed120 A
Power - max188 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Gate charge70 nC
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test condition400V, 30A, 13Ohm, 15V
Switching energy560µJ (on), 320µJ (off)
Td (on/off) @ 25°C17ns/124ns
Vce(on) (Max) @ vge, ic1.7V @ 15V, 30A
Reverse recovery time75 ns

Product details

650 V Trench Field Stop IGBT in a surface-mount D²Pak

The Infineon IKB30N65ES5ATMA1 is a 650 V, 62 A Trench Field Stop IGBT from the TrenchStop™ 5 series, housed in a PG-TO263-3 (D²Pak) surface-mount package. It is designed for hard-switching applications such as motor drives, power factor correction (PFC) circuits, and uninterruptible power supplies (UPS) where a 400 V DC bus is typical and the 650 V breakdown provides derating margin.

Conduction and switching loss at the test condition

At the test condition of 400 V bus, 30 A collector current, 13 Ω gate resistor, and 15 V gate drive, the IKB30N65ES5ATMA1 exhibits a typical Vce(on) of 1.7 V. This on-state voltage sets the conduction loss floor for a given duty cycle and load current. Switching energy is specified at 560 µJ for turn-on and 320 µJ for turn-off under the same test condition. These values, combined with the 17 ns turn-on delay and 124 ns turn-off delay at 25°C, allow the designer to estimate total switching loss at the target PWM frequency. Total gate charge is 70 nC, which is moderate for a 62 A rated IGBT. A standard gate-driver IC with a few amperes of peak output current can drive this part into the tens of kilohertz range without excessive driver dissipation.

Thermal headroom and package reality

The junction temperature range extends from -40°C to 175°C, giving thermal margin in high-ambient industrial or automotive environments. Maximum power dissipation is 188 W, but the achievable continuous dissipation depends on the PCB copper area and thermal vias under the D²Pak tab. The PG-TO263-3 (D²Pak) package is a surface-mount power package with an exposed drain tab. The 2-lead-plus-tab footprint is the same as a standard D²Pak; the third lead is the tab itself.

Frequently asked questions

What are the alternatives to IKB30N65ES5ATMA1?

The IHW30N120R5XKSA1 is a TrenchStop™ series IGBT from Infineon, but it is a 1200 V, through-hole TO-247 part with higher gate charge (235 nC) and higher switching energy. It is not a pin-compatible or voltage-class substitute for the 650 V surface-mount IKB30N65ES5ATMA1.