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Infineon Technologies IHW40N65R5XKSA1

IHW40N65R5XKSA1 TrenchStop IGBT, 650 V 80 A TO-247-3

MPNIHW40N65R5XKSA1
End of Life

Infineon TrenchStop® IGBT, IHW40N65R5XKSA1, 650 V Vces, 80 A Ic, 1.7 V Vce(on) @ 15 V, 40 A, 193 nC Qg, -40°C to 175°C Tj, PG-TO247-3, Through Hole.

$3.39Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesTrenchStop®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IHW40N65R5XKSA1 specifications
ParameterValue
SeriesTrenchStop®
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)80 A
Current - collector pulsed120 A
Power - max230 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Gate charge193 nC
CaseTO-247-3
Test condition400V, 20A, 10Ohm, 15V
Switching energy630µJ (on), 140µJ (off)
Td (on/off) @ 25°C30ns/258ns
Vce(on) (Max) @ vge, ic1.7V @ 15V, 40A
Reverse recovery time90 ns

Product details

650 V, 80 A TrenchStop IGBT — active and in production

The Infineon IHW40N65R5XKSA1 is a TrenchStop® IGBT rated for 650 V collector-emitter breakdown and 80 A continuous collector current, housed in a PG-TO247-3 through-hole package.

Switching energy is 630 µJ turn-on and 140 µJ turn-off under the test condition of 400 V, 20 A, 10 Ohm gate resistor, 15 V gate drive — the turn-off loss is notably lower than the turn-on, which favours hard-switched topologies where the turn-on edge dominates the thermal budget. Reverse recovery time of 90 ns sets the diode tail loss and the high-frequency EMI signature; a faster recovery diode in parallel or an integrated diode with lower trr would reduce the turn-on loss further.

Frequently asked questions

Is IHW40N65R5XKSA1 a direct replacement for older IGBTs?

The IHW40N65R5XKSA1 is a TrenchStop device and is not listed as a direct replacement for any specific older-generation IGBT. Its 650 V, 80 A rating and TO-247-3 package mean it can replace a similarly rated part in the same footprint, but verify the gate drive voltage (15 V) and switching energy profile against the original part's datasheet before committing.