650 V, 80 A TrenchStop IGBT — active and in production
The Infineon IHW40N65R5XKSA1 is a TrenchStop® IGBT rated for 650 V collector-emitter breakdown and 80 A continuous collector current, housed in a PG-TO247-3 through-hole package.
Vce(on) is 1.7 V typical at 15 V gate drive and 40 A collector current — this is the conduction loss floor at the rated current, and it sets the I²R heating in the die for continuous-duty applications like motor drives and power supplies. Total gate charge is 193 nC; at a 20 kHz switching frequency the gate driver must supply about 3.9 mA average current, well within the capability of a standard IGBT driver IC. Switching energy is 630 µJ turn-on and 140 µJ turn-off under the test condition of 400 V, 20 A, 10 Ohm gate resistor, 15 V gate drive — the turn-off loss is notably lower than the turn-on, which favours hard-switched topologies where the turn-on edge dominates the thermal budget. Reverse recovery time of 90 ns sets the diode tail loss and the high-frequency EMI signature; a faster recovery diode in parallel or an integrated diode with lower trr would reduce the turn-on loss further.
The PG-TO247-3 package is a standard through-hole footprint with a large copper tab for heatsinking — the 230 W power dissipation rating assumes the tab is properly thermally coupled to a heatsink with thermal compound.