Trench IGBT for hard-switching up to 60 A
The Infineon IHW30N110R5XKSA1 is a 60 A trench-gate IGBT in a TO-247-3 through-hole package, rated for 330 W maximum power dissipation. The 1.85 V typical saturation voltage at 15 V gate drive and 30 A collector current sets the conduction loss floor — a key number when sizing the heatsink for a motor-drive or inverter stage.
Gate charge and switching speed
Total gate charge is 240 nC. That figure drives the gate-driver peak-current requirement: a 240 nC gate at a 20 kHz switching frequency draws an average 4.8 mA from the driver, but the turn-on edge needs a short pulse of several amps to charge the input capacitance within the desired dead-time window. The datasheet lists a 350 ns turn-off delay at 25 °C — the turn-on delay is not specified here, so bench verification of the full switching waveform is recommended for timing-critical designs.
Junction temperature and operating environment
The 175 °C Tj max is the absolute ceiling — the designer must derate the continuous collector current above 100 °C per the datasheet's thermal curve to stay inside the SOA.
Sourcing and lifecycle status
ROHS3 compliant.