650 V, 40 A TrenchStop IGBT in TO-247-3
The Infineon IHW20N65R5XKSA1 is a 650 V, 40 A TrenchStop IGBT in a TO-247-3 through-hole package, designed for hard-switching applications up to 175°C junction temperature. Rated at 150 W maximum power dissipation, it targets motor drives, UPS systems, and welding inverters where the 650 V breakdown voltage provides margin on a 400 V DC bus.
Switching losses and gate drive budget
At the test condition of 400 V, 10 A, 20 Ohm gate resistor, and 15 V gate drive, the turn-on energy is 300 µJ and turn-off energy is 70 µJ — the on-loss dominates the switching cycle. Total gate charge is 97 nC, so at a 20 kHz switching frequency the average gate drive current is about 1.9 mA, well within the capability of a standard IGBT driver IC. The 68 ns reverse recovery time of the internal diode reduces the dead-time penalty in half-bridge topologies.
Temperature range and thermal design
Rated for -40°C to 175°C junction temperature, the 175°C maximum allows higher current density in a given heatsink compared to 150°C-rated IGBTs, but the thermal resistance from junction to case must be managed to keep TJ below the limit under full load. The TO-247-3 package (PG-TO247-3) provides a large copper tab for heatsink mounting — the thermal pad area and mounting torque directly set the junction-to-case thermal resistance.