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Infineon Technologies IGW15N120H3FKSA1

IGW15N120H3FKSA1 IGBT 1200V 30A TO-247-3, TrenchStop

MPNIGW15N120H3FKSA1
End of Life

Infineon TrenchStop IGBT, IGW15N120H3FKSA1, 1200 V Vces, 30 A Ic, 2.4 V Vce(on) at 15 V/15 A, 75 nC gate charge, 217 W power dissipation, TO-247-3 through-hole package, -40°C to 175°C junction temperature.

$4.77Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IGW15N120H3FKSA1 Technical Specifications
ParameterValue
SeriesTrenchStop®
IGBT typeTrench Field Stop
Input typeStandard
Mounting typeThrough Hole
Voltage - collector emitter breakdown1200 V
Current - collector (Ic)30 A
Current - collector pulsed60 A
Power - max217 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Gate charge75 nC
CaseTO-247-3
Test condition600V, 15A, 35Ohm, 15V
Switching energy1.55mJ
Td (on/off) @ 25°C21ns/260ns
Vce(on) (Max) @ vge, ic2.4V @ 15V, 15A

Product details

1200 V / 30 A TrenchStop IGBT for power conversion

The Infineon IGW15N120H3FKSA1 is a Trench Field Stop IGBT rated at 1200 V collector-emitter breakdown and 30 A continuous collector current, with a 60 A pulsed capability. It is housed in a TO-247-3 through-hole package (PG-TO247-3-1) and operates over a -40°C to 175°C junction temperature range. Typical applications include motor drives, uninterruptible power supplies, solar inverters, and welding equipment — any medium-frequency switched-mode power stage requiring a 1200 V blocking voltage with low conduction loss.

Conduction and switching losses — the numbers that matter

Vce(on) is 2.4 V maximum at 15 V gate drive and 15 A collector current — the conduction loss floor at that operating point. The total switching energy is 1.55 mJ under the test condition of 600 V, 15 A, 35 Ohm gate resistance, and 15 V gate drive. Gate charge is 75 nC total, which at a 50 kHz switching frequency draws roughly 3.75 mA from the gate driver — well within the capability of most standard IGBT driver ICs. Turn-on delay is 21 ns, turn-off delay 260 ns at 25°C.

It is ROHS3 compliant.

Frequently asked questions

Is the IGW15N120H3FKSA1 pin-compatible with the IGW15N120H3?

The IGW15N120H3FKSA1 and IGW15N120H3 share the same PG-TO247-3-1 package and pinout — they are the same die in the same package, differing only in the ordering code suffix. Functionally identical.