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Infineon Technologies IGP06N60TATMA1

IGP06N60TATMA1 IGBT, 600 V, 12 A, TRENCHSTOP™, TO-220-3

MPNIGP06N60TATMA1
End of Life

Infineon TRENCHSTOP™ IGP06N60TATMA1, Trench Field Stop IGBT, 600 V Vces, 12 A Ic, 42 nC Qg, 2.05 V Vce(on) @ 15 V/6 A, 88 W, TO-220-3, Through Hole, -40°C to 175°C Tj.

$0.58Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

IGP06N60TATMA1 Technical Specifications
ParameterValue
SeriesTRENCHSTOP™
IGBT typeTrench Field Stop
Input typeStandard
Mounting typeThrough Hole
Voltage - collector emitter breakdown600 V
Current - collector (Ic)12 A
Current - collector pulsed18 A
Power - max88 W
Operating temperature-40°C ~ 175°C (TJ)
PackageBulk
Gate charge42 nC
CaseTO-220-3
Test condition400V, 6A, 23Ohm, 15V
Switching energy90µJ (on), 110µJ (off)
Td (on/off) @ 25°C9ns/130ns
Vce(on) (Max) @ vge, ic2.05V @ 15V, 6A

Product details

600 V, 12 A Trench Field Stop IGBT — no anti-parallel diode

It is a standard-input device without an integrated anti-parallel diode, which means the designer must add an external freewheeling diode when driving inductive loads such as motor windings or transformer primaries.

Switching losses and gate drive budget

Tested at 400 V, 6 A with a 23 Ω gate resistor and 15 V gate drive, the part switches 90 µJ on and 110 µJ off. The 42 nC total gate charge keeps the drive current modest — at a 20 kHz switching frequency the average gate current is under 1 mA, well within the capability of a standard gate-driver IC. Turn-on delay is 9 ns; turn-off delay is 130 ns at 25 °C.

Conduction loss and thermal headroom

Vce(on) is 2.05 V typical at 15 V gate bias and 6 A collector current. At 12 A continuous rating, the conduction loss at full current is roughly 25 W. The 88 W maximum power dissipation and 175 °C maximum junction temperature provide substantial thermal headroom — a properly heatsunk TO-220-3 can handle the dissipation in a 70 °C ambient with a modest aluminium extrusion.

Frequently asked questions

Does IGP06N60TATMA1 have an anti-parallel diode?

No. The device is explicitly described as an IGBT without anti-parallel diode. For inductive load switching, an external fast-recovery diode must be added across the collector-emitter path.

What is the closest functional alternative to IGP06N60TATMA1?

The IHW30N120R5XKSA1 is a higher-voltage (1200 V), higher-current (30 A) TrenchStop™ IGBT in the same TO-220 package, but it is not a pin-compatible drop-in — the voltage class and current rating differ significantly. No direct second-source is listed for the 600 V / 12 A operating point.