The Infineon IGP01N120H2 is an N-channel IGBT (insulated-gate bipolar transistor) rated for 1200 V collector-emitter breakdown and 3.2 A continuous collector current, packaged in a through-hole TO-220-3 case (PG-TO220-3-1). It is designed for medium-frequency hard-switched power circuits such as motor drives, uninterruptible power supplies, and power-factor-correction stages where a 1200 V blocking voltage is needed to handle high-voltage DC links or mains rectified rails. The 28 W maximum power dissipation and 140 µJ switching energy (tested at 800 V, 1 A, 241 Ω gate resistor, 15 V gate drive) give a practical starting point for heatsink sizing and loss budgeting.
The junction temperature range spans -40°C to 150°C, which qualifies the part for industrial equipment operating in outdoor enclosures, engine bays, or unheated factory floors. The 150°C maximum junction temperature is common for power semiconductors and allows some headroom for thermal cycling in demanding applications.