What this IGBT is and where it fits
The Infineon IGP01N120H2 is an N-channel IGBT (insulated-gate bipolar transistor) rated for 1200 V collector-emitter breakdown and 3.2 A continuous collector current, packaged in a through-hole TO-220-3 case (PG-TO220-3-1). It is designed for medium-frequency hard-switched power circuits such as motor drives, uninterruptible power supplies, and power-factor-correction stages where a 1200 V blocking voltage is needed to handle high-voltage DC links or mains rectified rails. The 28 W maximum power dissipation and 140 µJ switching energy (tested at 800 V, 1 A, 241 Ω gate resistor, 15 V gate drive) give a practical starting point for heatsink sizing and loss budgeting.
Temperature range and environment
The junction temperature range spans -40°C to 150°C, which qualifies the part for industrial equipment operating in outdoor enclosures, engine bays, or unheated factory floors. The 150°C maximum junction temperature is common for power semiconductors and allows some headroom for thermal cycling in demanding applications.
Lifecycle and compliance
The IGP01N120H2 is listed as Active in production and ROHS3 compliant. No end-of-life notice or last-time-buy schedule is in effect, so the part can be specified into new designs with confidence in ongoing supply. The standard TO-220-3 package is widely second-sourced, but no pin-compatible alternate is listed in the official record.