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Infineon Technologies IGD06N60TATMA1
Infineon Technologies

Infineon IGD06N60TATMA1 IGBT, 600V 12A TrenchStop® TO-252

MPNIGD06N60TATMA1
End of Life

Infineon TrenchStop® IGBT, IGD06N60TATMA1, Trench Field Stop, 600V Vces, 12A Ic, 88W, 42nC Qg, TO-252-3 (DPak), -40°C to 175°C Tj.

$0.43248Ref. price · indicative, final on quote
IGD06N60TATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IGD06N60TATMA1 Technical Specifications
ParameterValue
SeriesTrenchStop®
IGBT typeTrench Field Stop
Input typeStandard
Mounting typeSurface Mount
Voltage - collector emitter breakdown600 V
Current - collector (Ic)12 A
Current - collector pulsed18 A
Power - max88 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Gate charge42 nC
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Test condition400V, 6A, 23Ohm, 15V
Switching energy200µJ
Td (on/off) @ 25°C9ns/130ns
Vce(on) (Max) @ vge, ic2.05V @ 15V, 6A

Product details

Package and mounting — SMT assembly notes

The TO-252-3 (DPak) is a common SMT power package with a large tab for heatsinking. The supplier device package is PG-TO252-3-11. The tab is the collector — ensure the PCB copper area under the tab is sized for the dissipation. The part is available in Tape & Reel or Cut Tape, which suits both prototyping and production reflow. No through-hole hardware needed.

Lifecycle and compliance — active, no LTB risk

The IGD06N60TATMA1 is listed as Active and ROHS3 compliant. There is no last-time-buy notice or end-of-life forecast on record.

Frequently asked questions

What is the difference between IGBT and MOSFET?

An IGBT combines a MOSFET gate with a bipolar output stage, giving lower on-state voltage drop at high voltages (like 600 V) compared to a MOSFET of similar die size, but with slower switching and a tail current during turn-off. For this part, the 600 V rating and 42 nC gate charge make it a better fit for motor-drive and inverter applications than a comparable-voltage MOSFET would be.