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Infineon Technologies IGB50N65H5ATMA1

Infineon IGB50N65H5ATMA1 IGBT, 650V 80A, TrenchStop 5, D²Pak

MPNIGB50N65H5ATMA1
End of Life

Infineon TrenchStop™ 5 IGBT, IGB50N65H5ATMA1, 650 V, 80 A continuous, 2.1 V Vce(on) at 15 V / 50 A, 120 nC gate charge, -40 to 175 °C junction, PG-TO263-3 surface mount.

$3.64Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesTrenchStop™ 5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IGB50N65H5ATMA1 specifications
ParameterValue
SeriesTrenchStop™ 5
IGBT typeTrench Field Stop
Input typeStandard
MountingSurface Mount
Voltage - collector emitter breakdown650 V
Current - collector (Ic)80 A
Current - collector pulsed150 A
Power - max270 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Gate charge120 nC
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test condition400V, 50A, 12Ohm, 15V
Switching energy1.59mJ (on), 750µJ (off)
Td (on/off) @ 25°C23ns/173ns
Vce(on) (Max) @ vge, ic2.1V @ 15V, 50A

Product details

650 V, 80 A TrenchStop 5 — the power-stage workhorse

The Infineon IGB50N65H5ATMA1 is a 650 V, 80 A Trench Field Stop IGBT from the TrenchStop 5 series, in a surface-mount PG-TO263-3 (D²Pak) package. It targets hard-switching applications like motor drives, UPS inverters, and PFC stages where conduction and switching losses must balance. The 650 V collector-emitter breakdown gives a comfortable derating margin on a 400 VDC bus — the standard intermediate rail in three-phase industrial drives and solar inverters.

Conduction and switching — the loss budget

At this operating point the conduction loss is 105 W, which combined with the 270 W package limit means the thermal design — heatsink, airflow, PCB copper — is the real constraint, not the die itself. Total gate charge is 120 nC, a moderate figure that a standard IGBT driver IC (e.g., 2 A peak source/sink) can switch in the 10–20 kHz range without excessive drive power. The test condition of 400 V, 50 A, 12 Ohm gate resistor, 15 V gate drive yields turn-on energy of 1.59 mJ and turn-off energy of 750 µJ — the switching loss per cycle at 16 kHz would be about 37 W, which must be added to the conduction loss for the total thermal budget. Turn-on delay is 23 ns and turn-off delay is 173 ns at 25°C. The 150 ns asymmetry means the dead-time setting in the inverter bridge must accommodate the longer turn-off delay to prevent shoot-through.

Package and thermal — D²Pak layout notes

The PG-TO263-3 (D²Pak) surface-mount package has an exposed metal tab that is electrically connected to the collector. The PCB footprint must include a thermal pad with multiple vias to the inner-layer copper planes to pull heat away from the tab. The 270 W maximum power dissipation is achievable only with adequate heatsinking — a two-layer board with minimal copper will derate that figure significantly. The 80 A continuous collector rating and 150 A pulsed rating mean the PCB traces and solder joints must be sized for the peak current, not just the DC average.

Lifecycle and compliance — active for new designs

For dual-sourcing, the buyer should qualify a second IGBT from a different manufacturer with matching 650 V / 80 A / TO-263 ratings.

Frequently asked questions

What is the Vce(on) of the IGB50N65H5ATMA1?

The typical Vce(on) is 2.1 V at 15 V gate drive and 50 A collector current. This is the conduction loss floor at the rated operating point.

Is the IGB50N65H5ATMA1 RoHS compliant?

Yes, it is ROHS3 compliant, suitable for lead-free soldering processes.