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Infineon Technologies IGB30N60H3ATMA1
Infineon Technologies

Infineon IGB30N60H3ATMA1 IGBT, 600V 60A TrenchStop® TO-263

MPNIGB30N60H3ATMA1
End of Life

Infineon TrenchStop® IGBT, IGB30N60H3ATMA1, 600 V Collector-Emitter Breakdown, 60 A Continuous Collector, 187 W Max Power, 165 nC Gate Charge, TO-263-3 (D²Pak) Surface Mount, -40°C to 175°C Junction.

$2.86Ref. price · indicative, final on quote
IGB30N60H3ATMA1 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IGB30N60H3ATMA1 Technical Specifications
ParameterValue
SeriesTrenchStop®
IGBT typeTrench Field Stop
Input typeStandard
Mounting typeSurface Mount
Voltage - collector emitter breakdown600 V
Current - collector (Ic)60 A
Current - collector pulsed120 A
Power - max187 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Gate charge165 nC
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test condition400V, 30A, 10.5Ohm, 15V
Switching energy1.17mJ
Td (on/off) @ 25°C18ns/207ns
Vce(on) (Max) @ vge, ic2.4V @ 15V, 30A

Product details

Package and mounting — surface-mount D²Pak

The IGB30N60H3ATMA1 comes in a TO-263-3 (D²Pak) surface-mount package, supplier package code PG-TO263-3-2. The large tab provides the collector connection and the primary heat path to the PCB copper pour. Reflow soldering is standard; the package is also available in Tape & Reel or Cut Tape options for volume assembly or prototype runs.

Lifecycle and compliance — active production, no LTB worry

It is ROHS3 compliant, so it meets the latest EU restriction directives for lead and other substances. The TrenchStop® series is a mature Infineon platform with long-term manufacturing commitment.

Frequently asked questions

What is the gate charge of IGB30N60H3ATMA1?

The total gate charge is 165 nC at 15 V gate drive. This determines the gate driver current needed to achieve a target switching speed.

What is the Vce(sat) of IGB30N60H3ATMA1?

The maximum Vce(on) (saturation voltage) is 2.4 V at 15 V gate drive and 30 A collector current. This is the key figure for calculating conduction loss.

Is IGB30N60H3ATMA1 RoHS compliant?

Yes, the IGB30N60H3ATMA1 is ROHS3 compliant, meeting the latest EU RoHS directive for lead and other restricted substances.

What are the alternatives to IGB30N60H3ATMA1?

The IHW30N120R5XKSA1 is a through-hole TrenchStop™ IGBT with a 1200 V rating and 330 W power capability, but it is a different voltage class and package — not a direct pin-compatible substitute. For a 600 V surface-mount alternative within the same family, consult the Infineon TrenchStop® portfolio for parts with similar Vces and Ic ratings.