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Infineon Technologies IGB20N60H3ATMA1
Infineon Technologies

IGB20N60H3ATMA1 600V 40A TrenchStop IGBT, D2PAK

MPNIGB20N60H3ATMA1
End of Life

Infineon TrenchStop® IGBT, IGB20N60H3ATMA1, Trench Field Stop, 600 V, 40 A, 170 W, Surface Mount, TO-263-3 (D²Pak), -40°C to 175°C TJ.

$1.93Ref. price · indicative, final on quote
IGB20N60H3ATMA1 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IGB20N60H3ATMA1 Technical Specifications
ParameterValue
SeriesTrenchStop®
IGBT typeTrench Field Stop
Input typeStandard
Mounting typeSurface Mount
Voltage - collector emitter breakdown600 V
Current - collector (Ic)40 A
Current - collector pulsed80 A
Power - max170 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Gate charge120 nC
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test condition400V, 20A, 14.6Ohm, 15V
Switching energy690µJ
Td (on/off) @ 25°C16ns/194ns
Vce(on) (Max) @ vge, ic2.4V @ 15V, 20A

Product details

600 V, 40 A Trench Field-Stop IGBT in D²Pak

The Infineon IGB20N60H3ATMA1 is a 600 V, 40 A Trench Field-Stop IGBT from the TrenchStop® series, housed in a surface-mount PG-TO263-3 (D²Pak) package. It delivers a typical on-state voltage of 2.4 V at 15 V gate drive and 20 A collector current, with a total switching energy of 690 µJ under the standard test condition of 400 V, 20 A, 14.6 Ω gate resistor, and 15 V gate drive. The junction temperature range spans -40°C to 175°C, making it suitable for motor drives, power supplies, and industrial inverters where both conduction and switching losses matter.

Package and mounting

Surface-mount D²Pak (TO-263-3) with the tab as the collector. The large tab area conducts heat to the PCB copper plane — a 2 oz copper pour under the tab with thermal vias to an inner-layer plane is the standard sink. The package accepts standard reflow profiles; the tape-and-reel or cut-tape option covers prototype through production volume.

Lifecycle and compliance

ROHS3 compliant. The TrenchStop® series is Infineon's current-generation trench field-stop platform; no direct replacement needed for new designs.

Frequently asked questions

What is the exact replacement for IGB20N60H3ATMA1?

No replacement is needed — this part is active and current production. If you are looking for a functional alternative with higher voltage rating, the IHW30N120R5XKSA1 is a 1200 V, 30 A through-hole TrenchStop IGBT, but it is not a pin-compatible swap (different package and voltage class).

How does IGB20N60H3ATMA1 compare to IGB20N60S?

The IGB20N60S is a different variant within the same voltage/current class. The H3 suffix denotes the TrenchStop® generation with field-stop technology; the S variant uses an earlier trench technology. The H3 offers lower Vce(on) and faster switching at the same ratings. For exact differences, compare the datasheet switching energy and saturation voltage curves.

What are the specifications of IGB20N60H3ATMA1?

600 V collector-emitter breakdown, 40 A continuous collector current, 80 A pulsed, 2.4 V Vce(on) at 15 V/20 A, 690 µJ total switching energy, 120 nC gate charge, 170 W maximum power dissipation, -40°C to 175°C junction temperature range, surface-mount D²Pak (PG-TO263-3) package.