SiC Schottky for hard-switched power stages
The IDWD30G120C5XKSA1 is an Infineon CoolSiC+ silicon carbide Schottky diode rated for 1200 V reverse blocking and 87 A average forward current. Its zero reverse recovery time eliminates the switching loss term in hard-switched topologies — PFC boost, inverter output, and DC-DC converter stages where a Si fast-recovery diode would dump charge every cycle.
The 0 ns reverse recovery time (trr) means the diode stores no minority charge. The 1980 pF junction capacitance at 1 V still charges and discharges every cycle. The 1.65 V forward drop at 30 A is higher than a comparable Si hyperfast diode's Vf at the same current, but the zero-recovery benefit more than compensates above roughly 50 kHz switching frequency. Below that, a Si diode may still be cost-competitive — the crossover point depends on the duty cycle and bus voltage.
Thermal headroom and package fit
The TO-247-2 (PG-TO247-2) through-hole package mates with standard TO-247 heatsink clips and PCB footprints — no special mounting hardware beyond the usual M3 screw and thermal interface pad. Reverse leakage at 1200 V is 248 µA — negligible for steady-state losses but worth checking at elevated junction temperature, where SiC leakage rises faster than Si.
Lifecycle and compliance
Product status is Active, with ROHS3 compliance. The CoolSiC+ series is Infineon's established SiC Schottky generation; the TO-247-2 package is a standard industry footprint, so second-sourcing to another vendor's 1200 V, 30 A-class SiC diode (e.g., Wolfspeed C4D30120D) is mechanically possible, though the electrical parameters differ and should be validated in the target circuit.