1200 V SiC Schottky — the switching-loss killer
The Infineon IDWD20G120C5XKSA1 is a 1200 V, 62 A average-rated silicon carbide Schottky diode from the CoolSiC™+ generation, housed in a through-hole TO-247-2 package. Its zero reverse recovery time eliminates the diode-turn-off losses that dominate silicon ultrafast rectifiers in hard-switched topologies.
With a reverse recovery time of 0 ns, this diode contributes no switching loss during the commutation interval. In a continuous-conduction-mode PFC stage or a motor-drive inverter, that translates directly into lower heatsink temperature and higher efficiency at light load. The forward voltage drop is 1.65 V typical at 20 A — the conduction loss is purely resistive and predictable, with no snap-off or ringing tail current to manage.
175 °C junction — thermal headroom for industrial environments
The 1368 pF capacitance at 1 V is typical for a 62 A SiC die — the driver sees a benign capacitive load.
TO-247-2 — a rework-friendly power package
The through-hole TO-247-2 (PG-TO247-2) is a three-lead package with a large backside tab for heatsink mounting. It survives hot-air removal and resoldering without pad damage — the leads are thick enough to handle a rework cycle, and the tab provides a clear thermal path.