IDW75E60FKSA1

Infineon Technologies

Infineon IDW75E60FKSA1, Fast Recovery Diode, 600 V, 120 A, trr 121 ns, Vf 2 V @ 75 A, TO-247-3, Through Hole, -55°C to 175°C.

Infineon Technologies IDW75E60FKSA1
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Technical specifications

IDW75E60FKSA1 specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2 V @ 75 A
Current - reverse leakage @ vr40 µA @ 600 V
Current - average rectified120A
Operating temperature - junction-55°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-247-3
Reverse recovery time121 ns

Technical details

Fast recovery diode for high-efficiency power stages

It targets boost PFC stages, output rectification in welding inverters, and freewheeling diodes in motor drives where reverse recovery charge directly impacts switching loss. The 121 ns reverse recovery time (trr) keeps the diode in the fast-recovery class, cutting turn-off losses compared to standard recovery parts. That matters in continuous-conduction-mode PFC or hard-switched bridges where the diode's snap-off characteristic can ring the node.

Ratings that drive the BOM decision

Rated for 600 V reverse voltage and 120 A average forward current. The 2 V forward drop at 75 A gives a reasonable conduction loss for a 120 A die. Reverse leakage is 40 µA at 600 V, which is negligible for most designs but worth noting in high-impedance or low-standby-power circuits where leakage at elevated temperature climbs.

TO-247-3 (PG-TO247-3-1) through-hole package. The three-pin layout is standard for a single diode with the cathode on the tab. Mount with a thermal pad or mica insulator to the heatsink; the tab is electrically live.

ROHS3 compliant, so it clears EU and most global RoHS requirements without an exemption.

IDW75E60FKSA1
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