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Infineon Technologies IDW60C65D1XKSA1

Infineon IDW60C65D1XKSA1 Fast Recovery Diode Array

MPNIDW60C65D1XKSA1
End of Life

Infineon Rapid 1 series IDW60C65D1XKSA1, dual common-cathode fast recovery diode array, 650 V, 30 A per diode, 66 ns trr, 1.7 Vf at 30 A, TO-247-3, -40°C to 175°C junction.

$2.76Ref. price · indicative, final on quote
Infineon Technologies IDW60C65D1XKSA1 datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesRapid 1
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDW60C65D1XKSA1 specifications
ParameterValue
SeriesRapid 1
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 30 A
Current - reverse leakage @ vr40 µA @ 650 V
Current - average rectified (Io) (per diode)30A
Operating temperature - junction-40°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-247-3
Diode configuration1 Pair Common Cathode
Reverse recovery time66 ns

Product details

66 ns recovery — the switching-loss ceiling

Its 66 ns reverse recovery time places it in the fast-recovery class for hard-switching PFC stages, boost converters, and output rectification in the 1–3 kW range.

Forward drop and thermal budget

At 1.7 V typical forward drop at 30 A per diode, the conduction loss at full load runs about 51 W per die. That heat has to leave through the TO-247-3 tab — the copper pad area on the heatsink side sets the junction-to-case thermal resistance, and the 175 °C max junction rating means the heatsink must keep the case below roughly 125 °C at full load to stay inside the SOA.

Frequently asked questions

What is the reverse recovery time of IDW60C65D1XKSA1?

The reverse recovery time (trr) is 66 ns, which qualifies this diode as a fast recovery type for hard-switching applications above 200 mA.

Is IDW60C65D1XKSA1 RoHS compliant?

Yes, it is ROHS3 compliant per the manufacturer's listing.