650 V / 20 A SiC Schottky — zero-recovery switching
The Infineon IDW40G65C5BXKSA2 is a silicon carbide Schottky diode from the CoolSiC+ series, rated 650 V reverse voltage and 20 A average forward current in a through-hole TO-247-3 package. Its headline spec — zero reverse recovery time (trr = 0 ns) — means there is no stored charge to sweep out during turn-off, so switching losses are effectively eliminated in the diode itself. This is the main reason designers pick SiC over ultrafast silicon in hard-switched PFC, LLC resonant converters, and high-frequency boost stages.
Forward drop and thermal headroom
Maximum forward voltage is 1.7 V at 20 A. Reverse leakage at 650 V is 210 µA.
Package and mounting — TO-247-3
The PG-TO247-3 package uses the standard TO-247 footprint with three through-hole leads. The large copper tab on the back carries the cathode and is the primary thermal path — a pad area on the PCB or a clip-on heatsink with thermal interface material sets the junction-to-case resistance. No exposed paddle to solder; the tab is electrically live (cathode potential), so the heatsink must be isolated or the mounting hole kept clear.
Lifecycle and supply posture
It is RoHS3 compliant (lead-free).