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Infineon Technologies IDW40E65D1FKSA1

IDW40E65D1FKSA1 Fast Recovery Diode, 650V 80A TO-247-3

MPNIDW40E65D1FKSA1
End of Life

Infineon IDW40E65D1FKSA1, Fast Recovery Diode, 650 V, 80 A, 129 ns trr, Through Hole, TO-247-3, PG-TO247-3-1, -40°C to 175°C.

$2.74Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDW40E65D1FKSA1 specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 40 A
Current - reverse leakage @ vr40 µA @ 650 V
Current - average rectified80A
Operating temperature - junction-40°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-247-3
Reverse recovery time129 ns

Product details

129 ns reverse recovery time — switching loss anchor

The IDW40E65D1FKSA1 is an Infineon fast recovery epitaxial diode with a rated reverse recovery time of 129 ns. At a 40 A forward current the forward voltage is 1.7 V.

80 A average current in a TO-247-3 — thermal budget call

80 A average rectified current in the TO-247-3 package means the buyer must plan the heatsink and airflow. Reverse leakage at 650 V is 40 µA, negligible for the thermal budget.

Active production, ROHS3, no imminent LTB

ROHS3 compliant. The PG-TO247-3-1 package is a through-hole, leaded form factor that remains widely used in industrial power stages.

Frequently asked questions

What is the reverse recovery time of IDW40E65D1FKSA1?

The listed reverse recovery time is 129 ns, measured under standard test conditions. This trr qualifies the diode as Fast Recovery (≤ 500 ns at > 200 mA).

Is IDW40E65D1FKSA1 RoHS compliant?

Yes, it is ROHS3 Compliant.