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Infineon Technologies IDW30G65C5XKSA1

Infineon IDW30G65C5XKSA1 SiC Schottky Diode

MPNIDW30G65C5XKSA1
End of Life

Infineon CoolSiC™+ IDW30G65C5XKSA1, Silicon Carbide Schottky Diode, 650 V DC reverse, 30 A average rectified, zero reverse recovery time, TO-247-3 through-hole, -55°C to 175°C junction.

$13.44Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesCoolSiC™+
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDW30G65C5XKSA1 specifications
ParameterValue
SeriesCoolSiC™+
Diode typeSilicon Carbide Schottky
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 30 A
Current - reverse leakage @ vr220 µA @ 650 V
Current - average rectified30A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTube
CaseTO-247-3
Capacitance @ vr,860pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

What this SiC Schottky brings to the power stage

Its defining characteristic is zero reverse recovery time — listed as 0 ns trr — which eliminates the switching losses that plague silicon ultrafast diodes in hard-switched topologies. The TO-247-3 through-hole package (PG-TO247-3) handles the thermal load of a 30 A average forward current, and the 175°C maximum junction temperature gives headroom in a cramped enclosure.

No official second source or pin-compatible alternate is recorded in the Infineon CoolSiC™+ family, though other 650 V, 30 A SiC Schottkies in TO-247 exist from Wolfspeed and ST — each with its own gate-drive and thermal characteristics that require layout-level validation before substitution.

Frequently asked questions

What is the reverse recovery time of IDW30G65C5XKSA1?

The reverse recovery time is 0 ns — it is a silicon carbide Schottky diode with no stored charge, so there is no recovery tail.

Is IDW30G65C5XKSA1 RoHS compliant?

Yes, it is ROHS3 compliant.