Fast recovery — what that actually means here
The spec calls out Fast Recovery ≤ 500 ns at > 200 mA. For a SiC Schottky, that recovery time is essentially the RC time constant of the junction capacitance — there is no stored minority-carrier charge to sweep out. In practice, the reverse-recovery current is near zero, which eliminates the turn-on loss spike in the MOSFET or IGBT that drives the diode. If you are replacing a silicon ultrafast recovery diode in an existing PFC design, expect the switching losses in the main switch to drop measurably, and the diode itself runs cooler because there is no reverse-recovery dissipation.
Sourcing and lifecycle
The IDW20G120C5BFKSA1 is listed as Active and ROHS3 compliant. No last-time-buy or end-of-life notice is on record. This is a current-production Infineon CoolSiC™+ part, available through independent distribution.
