IDW16G65C5XKSA1

Infineon Technologies · CoolSiC™+ Series

Infineon CoolSiC™+ IDW16G65C5XKSA1 Silicon Carbide Schottky Diode, 650 V DC reverse, 16 A average rectified, 0 ns reverse recovery time, TO-247-3 through-hole package, -55°C to 175°C junction temperature.

Infineon Technologies IDW16G65C5XKSA1
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Technical specifications

IDW16G65C5XKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolSiC™+
Diode typeSilicon Carbide Schottky
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 16 A
Current - reverse leakage @ vr200 µA @ 650 V
Current - average rectified16A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTube
CaseTO-247-3
Capacitance @ vr,470pF @ 1V, 1MHz
Reverse recovery time0 ns

Technical details

What this SiC Schottky brings to the power stage

Its datasheet lists trr at 0 ns.

A silicon ultrafast diode in a 650 V, 16 A class typically carries reverse recovery charge that dumps into the MOSFET or IGBT as a current spike and extra dissipation. The IDW16G65C5XKSA1's 0 ns trr removes that entirely.

Package and mounting — TO-247-3

The PG-TO247-3 package is the standard through-hole TO-247 footprint. Three leads — anode, cathode, and the backside tab is the cathode as well. Heatsink mounting uses the hole; torque to the usual TO-247 spec with a thermal pad or grease.

No known PCN at this time.

IDW16G65C5XKSA1
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