650 V, 12 A SiC Schottky — zero-recovery switching
The Infineon IDW12G65C5XKSA1 is a 650 V, 12 A Silicon Carbide Schottky diode from the CoolSiC™+ generation, packaged in a through-hole TO-247-3 (PG-TO247-3). Its zero reverse recovery time (trr = 0 ns) eliminates the turn-off loss spike that limits ultrafast silicon diodes in hard-switched topologies — the No Recovery Time rating holds above 500 mA forward current, covering the full operating range.
What zero trr means for the BOM
The SiC Schottky structure has no minority carriers, so trr is 0 ns — no recovery charge, no temperature-dependent tail current.
It is fully ROHS3 compliant. The CoolSiC™+ series is Infineon's mainstream SiC Schottky portfolio, so second-sourcing is straightforward from other vendors' 650 V, 12 A SiC diodes in TO-247-2 or TO-247-3, though pinout and package footprint should be verified per the datasheet.