650 V, 12 A SiC Schottky — zero-recovery switching
The Infineon IDW12G65C5XKSA1 is a 650 V, 12 A Silicon Carbide Schottky diode from the CoolSiC™+ generation, packaged in a through-hole TO-247-3 (PG-TO247-3). Its zero reverse recovery time (trr = 0 ns) eliminates the turn-off loss spike that limits ultrafast silicon diodes in hard-switched topologies — the No Recovery Time rating holds above 500 mA forward current, covering the full operating range. Junction temperature spans -55°C to 175°C, which fits power stages in PFC, DC-DC converters, and inverter output freewheeling where thermal cycling is aggressive.
What zero trr means for the BOM
The SiC Schottky structure has no minority carriers, so trr is 0 ns — no recovery charge, no temperature-dependent tail current.
Lifecycle and compliance
The IDW12G65C5XKSA1 carries an Active product status — no last-time-buy or end-of-life notice is in effect. It is fully ROHS3 compliant. The CoolSiC™+ series is Infineon's mainstream SiC Schottky portfolio, so second-sourcing is straightforward from other vendors' 650 V, 12 A SiC diodes in TO-247-2 or TO-247-3, though pinout and package footprint should be verified per the datasheet.