650 V, 15 A fast recovery — the switching-loss tradeoff
The Infineon IDV15E65D2XKSA1 is a 650 V, 15 A fast recovery epitaxial diode (FRED) in a TO-220-2 through-hole package. Its 47 ns reverse recovery time (trr) places it in the fast-recovery class — recovery under 500 ns at currents above 200 mA — making it a fit for hard-switched topologies where a standard recovery diode would burn through the switching-loss budget.
47 ns trr — what it buys the switching stage
The 47 ns trr is the headline parameter. In a continuous-conduction-mode PFC stage or a 100 kHz LLC converter, that recovery charge directly sets the turn-off loss in the diode and the turn-on loss in the companion MOSFET. A standard 200 ns recovery diode would roughly quadruple the switching loss at the same frequency — the 47 ns trr keeps the thermal design manageable without moving to a SiC Schottky. Forward voltage is 2.2 V maximum at 15 A and 25 °C junction. That is the conduction-loss floor at full load — at 15 A average, expect about 33 W of forward drop loss before any temperature derating.
Package and thermal path
The TO-220-2 through-hole package has a metal tab that carries the cathode — the tab is the primary thermal path to the heatsink. The 175 °C Tj rating means the die attach and passivation are built for the higher end of the industrial temperature envelope, not just 150 °C commercial parts. Reverse leakage is specified at 40 µA at 650 V, which is typical for a fast-recovery die of this voltage class and rises with temperature — budget for that in standby-loss calculations.