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Infineon Technologies IDT12S60C
Infineon Technologies

Infineon IDT12S60C SiC Schottky Diode, 600 V 12 A, TO-220-2

MPNIDT12S60C
End of Life

Infineon thinQ!™ IDT12S60C Silicon Carbide Schottky diode, 600 V DC reverse voltage, 12 A average rectified current, zero reverse recovery time, TO-220-2 through-hole package, -55 to 175 °C junction temperature.

$4.25Ref. price · indicative, final on quote
IDT12S60C datasheet
PackagingTO-220-2
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IDT12S60C Technical Specifications
ParameterValue
SeriesthinQ!™
Diode typeSilicon Carbide Schottky
Mounting typeThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 12 A
Current - reverse leakage @ vr160 µA @ 600 V
Current - average rectified12A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageBulk
CaseTO-220-2
Capacitance @ vr, f530pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

Package and mounting

The Infineon IDT12S60C is a 600 V, 12 A Silicon Carbide Schottky diode from the thinQ!™ series. Its defining characteristic is zero reverse recovery time (trr = 0 ns) — no recovery tail, no turn-off spike. That means you can run it in a hard-switching PFC boost or flyback primary without the snubber network a silicon ultrafast would need, and the switching loss stays negligible at frequency.

Package and mounting

Through-hole TO-220-2 (Infineon code PG-TO220-2-2). Two leads, tab is the cathode. Mounts with a single M3 screw and a TO-220 insulator pad. No hot-air station needed — a soldering iron and a screwdriver is all it takes to swap it on site. The bulk shipping form means it arrives loose in a bag, not taped; fine for proto and repair stock, but for production reel ask for the tape-and-reel variant if available.

Frequently asked questions

What is the reverse recovery time of the IDT12S60C?

Zero nanoseconds — the Silicon Carbide Schottky structure has no stored charge, so trr is 0 ns. No recovery tail, no turn-off loss spike.

What is the closest pin-compatible equivalent to the IDT12S60C?

Infineon does not list a direct second-source within the thinQ! series. For a pin-compatible alternative, look at 600 V, 10–15 A SiC Schottkys in TO-220-2 from Wolfspeed (e.g., C3D10060A) or STMicroelectronics — same footprint, same zero-recovery behaviour, but verify Vf and capacitance against your design.

What is the IDT12S60C's listed speed?

The key speed parameter is No Recovery Time > 500 mA (Io) — meaning the diode exhibits zero reverse recovery time even at high forward current, so switching speed is limited only by the circuit parasitics, not by stored charge.