IDT10S60C - Infineon Technologies
MPNIDT10S60C
End of Life
DIODE SIL CARB 600V 10A TO220-2
$3.55Ref. price · indicative, final on quote
PackagingTO-220-2
RoHSROHS3 Compliant
SeriesthinQ!™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | thinQ!™ |
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 10 A |
| Current - reverse leakage @ vr | 140 µA @ 600 V |
| Current - average rectified | 10A (DC) |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Bulk |
| Case | TO-220-2 |
| Capacitance @ vr, | 480pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |