600 V, 3 A SiC Schottky — zero recovery loss
The IDT02S60C is a silicon carbide Schottky diode from Infineon, rated for 600 V DC reverse voltage and 3 A average rectified current. Its defining characteristic is zero reverse recovery time — the majority-carrier SiC structure eliminates the stored-charge tail that causes switching losses in silicon ultrafast diodes.
Junction temperature and forward drop
Operating junction temperature spans -55°C to 175°C, which covers the full industrial and automotive thermal envelope. Forward voltage is specified at 2.4 V maximum at 3 A — this is the conduction loss floor at rated current, and it rises with junction temperature per the normalised curve in the datasheet.
Reverse leakage and capacitance
Reverse leakage is 15 µA at 600 V, a low figure that keeps standby dissipation negligible in PFC and flyback stages. Junction capacitance is 60 pF at 1 V, 1 MHz — the small-signal capacitance matters for snubber design and for estimating switching losses at light load.
Package and mounting
The IDT02S60C comes in a TO-220-2 through-hole package, designated PG-TO220-2 by Infineon. The two-lead format with the tab as the cathode suits standard heatsink mounting with a TO-220 clip or screw — the thermal pad area under the tab sets the junction-to-case thermal resistance.
RoHS3 compliant per the listing.