600 V, 3 A SiC Schottky — zero recovery loss
Its defining characteristic is zero reverse recovery time — the majority-carrier SiC structure eliminates the stored-charge tail that causes switching losses in silicon ultrafast diodes.
Junction temperature and forward drop
Reverse leakage and capacitance
Reverse leakage is 15 µA at 600 V, a low figure that keeps standby dissipation negligible in PFC and flyback stages. Junction capacitance is 60 pF at 1 V, 1 MHz — the small-signal capacitance matters for snubber design and for estimating switching losses at light load.
The IDT02S60C comes in a TO-220-2 through-hole package, designated PG-TO220-2 by Infineon. The two-lead format with the tab as the cathode suits standard heatsink mounting with a TO-220 clip or screw — the thermal pad area under the tab sets the junction-to-case thermal resistance.
RoHS3 compliant per the listing.