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Infineon Technologies IDP40E65D2XKSA1

IDP40E65D2XKSA1 650V 40A Fast Recovery Diode, TO-220-2

MPNIDP40E65D2XKSA1
End of Life

Infineon IDP40E65D2XKSA1 general purpose fast recovery diode, 650 V reverse voltage, 40 A average rectified current, 75 ns reverse recovery time, TO-220-2 through-hole package, -40°C to 175°C junction temperature.

$2.25Ref. price · indicative, final on quote
Infineon Technologies IDP40E65D2XKSA1 datasheet (PDF)
PackagingTO-220-2
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDP40E65D2XKSA1 specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if2.3 V @ 40 A
Current - reverse leakage @ vr40 µA @ 650 V
Current - average rectified40A
Operating temperature - junction-40°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2
Reverse recovery time75 ns

Product details

650 V, 40 A fast recovery diode in TO-220-2

The IDP40E65D2XKSA1 is a general-purpose fast recovery diode from Infineon, rated for 650 V reverse voltage and 40 A average rectified current. It is housed in a TO-220-2 through-hole package and targets power-supply and motor-drive applications where fast switching and low recovery losses are needed.

75 ns reverse recovery time

The 75 ns reverse recovery time (trr) is the key switching parameter for this diode. The 2.3 V forward voltage at 40 A is the conduction-loss floor at rated current.

175 °C junction temperature

The 40 µA reverse leakage at 650 V is specified at room temperature.

The part is ROHS3 compliant.

Frequently asked questions

What is the reverse recovery time of IDP40E65D2XKSA1?

The reverse recovery time (trr) is 75 ns. This is the typical value; the datasheet provides the test conditions (di/dt, If, Vr) under which it is measured.