650 V, 40 A fast recovery diode in TO-220-2
The IDP40E65D2XKSA1 is a general-purpose fast recovery diode from Infineon, rated for 650 V reverse voltage and 40 A average rectified current. It is housed in a TO-220-2 through-hole package and targets power-supply and motor-drive applications where fast switching and low recovery losses are needed.
75 ns reverse recovery time
The 75 ns reverse recovery time (trr) is the key switching parameter for this diode. The 2.3 V forward voltage at 40 A is the conduction-loss floor at rated current.
175 °C junction temperature
The 40 µA reverse leakage at 650 V is specified at room temperature.
The part is ROHS3 compliant.
