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Infineon Technologies IDP30E65D2XKSA1

Infineon IDP30E65D2XKSA1 Fast Recovery Diode

MPNIDP30E65D2XKSA1
End of Life

Infineon IDP30E65D2XKSA1, Fast Recovery Diode, 650 V, 60 A, 42 ns trr, TO-220-2, Through Hole, -40°C to 175°C junction.

$1.86Ref. price · indicative, final on quote
PackagingTO-220-2
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDP30E65D2XKSA1 specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if2.2 V @ 30 A
Current - reverse leakage @ vr40 µA @ 650 V
Current - average rectified60A
Operating temperature - junction-40°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2
Reverse recovery time42 ns

Product details

It is built with standard planar technology and rated for a 42 ns reverse recovery time, making it suitable for hard-switching power stages such as PFC boost diodes, output rectification in SMPS, and motor drive freewheeling paths. The 175 °C maximum junction temperature allows operation in thermally constrained environments like enclosed power supplies or industrial drives without forced air.

The TO-220-2 package (Infineon code PG-TO220-2-1) is a standard through-hole form factor with a metal tab for heatsink attachment. The single-screw mounting hole accepts M3 hardware.

Frequently asked questions

What is IDP30E65D2XKSA1's listed speed?

It is a fast recovery diode with a reverse recovery time of 42 ns, rated for speeds up to 500 ns at currents above 200 mA.