650 V, 60 A fast recovery diode in TO-220-2
The Infineon IDP30E65D1XKSA1 is a 650 V, 60 A fast recovery diode in a through-hole TO-220-2 package (PG-TO220-2-1). It is a general-purpose standard-technology rectifier designed for hard-switching power stages where reverse recovery charge and time directly impact switching losses and EMI.
64 ns trr — the parameter that decides the switching stage
The 64 ns reverse recovery time (trr) is the headline switching spec. In a 100 kHz PFC boost stage or a 50 kHz inverter freewheel leg, that 64 ns trr limits the reverse-recovery current spike that the IGBT or MOSFET must commutate. A slower diode (200 ns+) would push the switching device out of its RBSOA at high bus voltage. The forward voltage is 1.7 V at 30 A — half the rated 60 A average current. For a 60 A design, expect Vf to climb to around 1.9–2.0 V at full load and operating temperature, which sets the conduction loss at roughly 120 W per diode. That heat must be sunk through the TO-220 tab to a heatsink with a thermal resistance below 1 °C/W to keep the junction under 175 °C.
Through-hole TO-220-2 — mounting and thermal interface
The TO-220-2 package (PG-TO220-2-1) has a single screw-mount tab and two leads — anode and cathode. The tab is the cathode and the electrical connection to the heatsink; an insulating pad and shoulder washer are required if the heatsink is grounded. The 0.50 mm pitch of the leads is standard for TO-220, fitting a 1.0 mm diameter hole on a 2.54 mm grid.
For a production BOM, this diode can be qualified without an obsolescence watch item flag.