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Infineon Technologies IDP30E120XKSA1

IDP30E120XKSA1 1200V 50A Fast Recovery Diode, TO-220-2

MPNIDP30E120XKSA1
End of Life

Infineon IDP30E120XKSA1, General Purpose Fast Recovery Diode, 1200 V Vrrm, 50 A If(AV), 243 ns trr, TO-220-2 Through Hole, PG-TO220-2-2, -55 to 150 °C junction.

$2.88Ref. price · indicative, final on quote
PackagingTO-220-2
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IDP30E120XKSA1 Technical Specifications
ParameterValue
Mounting typeThrough Hole
Voltage - DC reverse (Vr)1200 V
Voltage - forward (Vf) (Max) @ if2.15 V @ 30 A
Current - reverse leakage @ vr100 µA @ 1200 V
Current - average rectified50A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2
Reverse recovery time243 ns

Product details

1200 V, 50 A fast recovery diode — the TO-220-2 workhorse for hard-switched power stages

The Infineon IDP30E120XKSA1 is a general-purpose fast recovery diode in a TO-220-2 through-hole package, rated for 1200 V DC reverse voltage and 50 A average rectified forward current. It is built with standard planar technology and delivers a reverse recovery time of 243 ns, placing it in the fast recovery class (≤ 500 ns at > 200 mA). Typical applications include boost PFC stages, output rectification in offline flyback converters, snubber clamps, and freewheeling diodes in motor drive inverters where the DC bus is 600–800 V and the switching frequency stays under 50 kHz.

243 ns trr — what it buys in a hard-switched design

The 243 ns reverse recovery time is the key switching parameter. In a continuous-conduction-mode PFC or hard-switched inverter, the diode's reverse recovery charge contributes directly to the turn-off loss in the companion MOSFET or IGBT. A 243 ns trr is typical for a 1200 V fast epitaxial diode — it reduces the recovery spike and the associated EMI compared to a standard recovery part, but it still requires a snubber or careful layout when the switching frequency pushes past 30 kHz. The forward voltage is 2.15 V at 30 A, so conduction loss at full load is around 100 W — the TO-220-2 package needs a heatsink sized for that dissipation, especially at the 150 °C junction temperature limit.

Package and thermal reality — TO-220-2 with the PG suffix

The package is a standard TO-220-2 with the Infineon PG-TO220-2-2 variant — two leads, a metal tab that is electrically the anode (common cathode on the tab), and a 3.2 mm mounting hole for a screw or clip to the heatsink. The junction-to-case thermal resistance is not listed in this evidence, but for a 50 A diode in a TO-220, the tab must be bolted to a heatsink with thermal compound; the 150 °C junction limit is reachable with a few tens of watts of dissipation. The through-hole mounting is straightforward for wave-solder or hand-solder assembly, and the package is widely second-sourced across the industry.

Frequently asked questions

What is the reverse recovery time of IDP30E120XKSA1?

The reverse recovery time (trr) is 243 ns, measured under standard test conditions. This qualifies the diode as fast recovery (≤ 500 ns at > 200 mA) for hard-switched power converters.