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Infineon Technologies IDP18E120XKSA1

Infineon IDP18E120XKSA1 Fast Recovery Diode

MPNIDP18E120XKSA1
End of Life

Infineon IDP18E120XKSA1 standard fast recovery diode, 1200 V reverse voltage, 31 A average rectified current, 195 ns reverse recovery time, TO-220-2 through-hole package, -55 to 150 °C junction temperature.

$2.48Ref. price · indicative, final on quote
Infineon Technologies IDP18E120XKSA1 datasheet (PDF)
PackagingTO-220-2
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDP18E120XKSA1 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)1200 V
Voltage - forward (Vf) (Max) @ if2.15 V @ 18 A
Current - reverse leakage @ vr100 µA @ 1200 V
Current - average rectified31A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-2
Reverse recovery time195 ns

Product details

1200 V, 31 A fast recovery diode for hard-switched power stages

195 ns trr — switching loss and snubber budget

The 195 ns reverse recovery time places this diode in the fast-recovery class (≤500 ns at >200 mA). For a 31 A, 1200 V boost PFC or inverter freewheel leg, this trr sets the turn-off switching loss and dictates the minimum snubber capacitance needed to keep the peak reverse-recovery current within the IGBT or MOSFET SOA. Forward voltage is 2.15 V typical at 18 A — a reasonable conduction-loss trade-off for the fast recovery characteristic. Reverse leakage is 100 µA at the full 1200 V blocking voltage, which matters for high-temperature off-state losses.

Frequently asked questions

What is the reverse recovery time of IDP18E120XKSA1?

The reverse recovery time is 195 ns.

What is the difference between IDP18E120XKSA1 and IDP18E120?

The IDP18E120XKSA1 is the standard TO-220-2 variant of the IDP18E120 die. The suffix XKSA1 denotes the Infineon tube-packaged through-hole version. Electrical ratings — 1200 V, 31 A, 195 ns trr — are identical to the base die.