1200 V, 28 A fast recovery diode — what it means for the power stage
The Infineon IDP12E120XKSA1 is a fast-recovery silicon diode rated for 1200 V DC reverse voltage and 28 A average rectified current, housed in a TO-220-2 through-hole package (PG-TO220-2-2). The 150 ns reverse recovery time qualifies it for hard-switched topologies like PFC boost stages and secondary-side rectification in switch-mode power supplies. The forward voltage of 2.15 V at 12 A gives a realistic conduction-loss figure for thermal design. Junction temperature spans -55°C to 150°C.
Sourcing and lifecycle — active, no LTB pressure
ROHS3 compliant. For a BOM line that needs a 1200 V, 28 A fast recovery diode in a TO-220-2 package, this part is a straightforward fit with stable supply.
