Infineon IDP12E120XKSA1, Fast Recovery Diode, Standard Technology, 1200 V DC Reverse Voltage, 28 A Average Rectified Current, 150 ns Reverse Recovery Time, 2.15 V Forward Drop at 12 A, TO-220-2 Package, Through Hole Mount, -55°C to 150°C Junction.
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 1200 V |
| Voltage - forward (Vf) (Max) @ if | 2.15 V @ 12 A |
| Current - reverse leakage @ vr | 100 µA @ 1200 V |
| Current - average rectified | 28A |
| Operating temperature - junction | -55°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Technology | Standard |
| Case | TO-220-2 |
| Reverse recovery time | 150 ns |
The Infineon IDP12E120XKSA1 is a fast-recovery silicon diode rated for 1200 V DC reverse voltage and 28 A average rectified current, housed in a TO-220-2 through-hole package (PG-TO220-2-2). The 150 ns reverse recovery time qualifies it for hard-switched topologies like PFC boost stages and secondary-side rectification in switch-mode power supplies. The forward voltage of 2.15 V at 12 A gives a realistic conduction-loss figure for thermal design.
ROHS3 compliant.
The reverse recovery time is 150 ns, which qualifies it for fast-switching applications like PFC and SMPS output rectification.
No official cross-reference or second-source alternate appears in the available records. For a direct replacement, verify the 1200 V, 28 A, TO-220-2 footprint and 150 ns trr against any candidate part.