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Infineon Technologies IDP09E120XKSA1

IDP09E120XKSA1 Fast Recovery Diode, 1.2 kV 23 A TO-220-2

MPNIDP09E120XKSA1
End of Life

Infineon IDP09E120XKSA1 standard fast recovery diode, 1200 V DC reverse voltage, 23 A average rectified current, 140 ns reverse recovery time (trr), through-hole TO-220-2 package, PG-TO220-2-1, junction temperature -55°C to 150°C.

$0.77Ref. price · indicative, final on quote
Infineon Technologies IDP09E120XKSA1 datasheet (PDF)
PackagingTO-220-2
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDP09E120XKSA1 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)1200 V
Voltage - forward (Vf) (Max) @ if2.15 V @ 9 A
Current - reverse leakage @ vr100 µA @ 1200 V
Current - average rectified23A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseTO-220-2
Reverse recovery time140 ns

Product details

Fast recovery rectifier for 1.2 kV bus rails

The Infineon IDP09E120XKSA1 is a standard fast recovery diode rated for 1200 V DC reverse voltage and 23 A average rectified current. It comes in a through-hole TO-220-2 package (PG-TO220-2-1). Its 140 ns reverse recovery time places it inside the fast-recovery class (trr ≤ 500 ns), making it a candidate for hard-switched PFC boost stages, flyback secondary rectification, and DC-link freewheeling in motor drives or UPS inverters where recovery losses at turn-off matter.

Forward drop and switching loss trade-off

Forward voltage is 2.15 V at 9 A. The 140 ns trr reduces reverse-recovery charge compared to a 500 ns part.

Leakage and temperature range

Reverse leakage is 100 µA at 1200 V.

Active lifecycle, no obsolescence concern

No NRND or last-time-buy notice is on record. It is ROHS3 compliant.

Frequently asked questions

What is the reverse recovery time of IDP09E120XKSA1?

The reverse recovery time (trr) is 140 ns, which qualifies it as a fast recovery diode per the ≤ 500 ns class definition.

What are the specifications of IDP09E120XKSA1?

It is a 1200 V, 23 A average rectified current fast recovery diode in a TO-220-2 through-hole package. Key specs: 140 ns trr, 2.15 V forward drop at 9 A, 100 µA reverse leakage at 1200 V, junction temperature range -55°C to 150°C.