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Infineon Technologies IDL12G65C5XUMA2

Infineon IDL12G65C5XUMA2 CoolSiC™+ SiC Schottky Diode

MPNIDL12G65C5XUMA2
End of Life

Infineon CoolSiC™+ IDL12G65C5XUMA2, SiC (Silicon Carbide) Schottky Diode, 650 V DC Reverse, 12 A Average Rectified, Zero Reverse Recovery Time (trr 0 ns), Surface Mount, PG-VSON-4 Package, -55°C to 150°C Junction.

$5.44Ref. price · indicative, final on quote
Packaging4-PowerTSFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IDL12G65C5XUMA2 Technical Specifications
ParameterValue
SeriesCoolSiC™+
Mounting typeSurface Mount
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 12 A
Current - reverse leakage @ vr190 µA @ 650 V
Current - average rectified12A
Operating temperature - junction-55°C ~ 150°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologySiC (Silicon Carbide) Schottky
Case4-PowerTSFN
Capacitance @ vr, f360pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

Zero-recovery SiC Schottky for hard-switched power stages

The Infineon IDL12G65C5XUMA2 is a 650 V, 12 A silicon carbide Schottky diode from the CoolSiC™+ family. Its defining characteristic is zero reverse recovery time — the datasheet lists trr at 0 ns — which eliminates the switching losses and EMI that a standard silicon ultrafast diode generates during turn-off. For a PFC boost stage, LLC resonant tank, or photovoltaic inverter, that means the diode no longer dictates the switching frequency ceiling or the snubber bill of materials. The part is surface-mount in a 4-PowerTSFN package, also designated PG-VSON-4. Junction temperature range is -55°C to 150°C, covering industrial power supplies, telecom rectifiers, and automotive on-board charger designs.

What the zero-recovery spec means for the switching node

The IDL12G65C5XUMA2 has a trr of 0 ns, so the diode transitions from conducting to blocking with no stored charge to sweep out. Forward voltage is specified at 1.7 V at the full 12 A rated current. Reverse leakage at the 650 V blocking voltage is 190 µA — a figure to include in standby-loss and thermal calculations, particularly if the diode will spend significant time at high junction temperature. Capacitance at 1 V bias is 360 pF. This is the output capacitance the switching node sees; it contributes to the resonant tank in LLC converters and to the turn-on loss of the companion switch in hard-switched topologies.

Package and mounting — what the EMS floor needs

The PG-VSON-4 is a small, no-lead package with a large bottom-side drain pad for thermal conduction. Standard surface-mount reflow applies. Check the moisture-sensitivity level on the reel label before the line runs — a high MSL rating means a bake cycle before reflow if the floor humidity exposure window has been exceeded. The pad footprint is compact, so verify solder-paste stencil aperture for adequate solder joint volume on the thermal pad.

Lifecycle and compliance — no procurement surprises

The IDL12G65C5XUMA2 carries an Active product status from Infineon and is ROHS3 compliant. The part is available in Tape & Reel and Cut Tape options.

Frequently asked questions

Is IDL12G65C5XUMA2 a direct replacement for a standard 650V 12A silicon diode?

Yes, in terms of voltage and current ratings it drops into the same 650 V, 12 A slot. The key difference is that the SiC Schottky has zero reverse recovery time, while a standard silicon ultrafast diode has a non-zero trr. The PCB footprint must match the PG-VSON-4 package, which differs from a typical TO-220 or D2PAK silicon diode footprint. Electrically it is a direct functional replacement that eliminates recovery losses, but the board layout must accommodate the surface-mount package.

Does IDL12G65C5XUMA2 need a gate resistor?

No. The IDL12G65C5XUMA2 is a Schottky diode, not a MOSFET or IGBT — it has no gate terminal. It does not require a gate resistor. The question may arise from confusion with SiC MOSFETs, which do need a gate drive circuit.

Is IDL12G65C5XUMA2 RoHS compliant?

Yes, it is ROHS3 Compliant per Infineon's lifecycle data.

What is IDL12G65C5XUMA2's listed speed?

The datasheet lists the speed as No Recovery Time > 500 mA (Io), with a reverse recovery time of 0 ns. This means the diode exhibits zero stored charge and no reverse recovery transient under the rated forward current condition.