Zero reverse recovery — what it means for the switching stage
The IDL10G65C5XUMA2 is an Infineon CoolSiC+ silicon carbide Schottky diode rated at 650 V DC reverse voltage and 10 A average rectified current. Its defining characteristic is zero reverse recovery time — the datasheet lists 0 ns trr — which means the diode contributes no switching loss component from stored charge clearing. This is the main reason to pick a SiC Schottky over a silicon ultrafast diode in a hard-switched PFC or DC-DC converter: the recovery loss term drops out of the efficiency calculation entirely. Junction temperature spans -55 to 150 °C, covering industrial motor drives, server PSUs, and automotive on-board charger stages.
Forward drop and leakage — the static trade-off
At the full 10 A rated current the forward voltage is 1.7 V maximum. That is higher than a comparable silicon Schottky at the same current, which is the SiC trade-off: you accept higher conduction loss at high load in exchange for eliminating the switching loss that would dominate at high frequency. Reverse leakage at the full 650 V blocking voltage is 180 µA — a figure that rises with junction temperature, so the thermal design should account for the leakage power at the worst-case hot die temperature.
Package and mounting
The diode comes in a 4-PowerTSFN package, also designated PG-VSON-4, with an exposed pad for thermal conduction to the PCB. Surface-mount assembly; the small footprint suits compact power stages where board area is tight. The pad layout and solder stencil aperture should follow the Infineon application note for the VSON-4 to get the rated thermal performance.
Lifecycle and compliance
ROHS3 compliant. No official second source is listed in the record, but the CoolSiC+ family includes several 650 V / 10 A SiC Schottky diodes in comparable packages from Infineon; the exact PG-VSON-4 footprint should be confirmed against the target layout.