Zero reverse recovery — the switching-loss killer
The IDK12G65C5XTMA2 is a 650 V, 12 A SiC Schottky diode from Infineon's CoolSiC™+ series. Its zero reverse recovery time (trr=0 ns) eliminates the switching loss that plagues silicon ultrafast diodes in hard-switched topologies — no recovery charge to sweep out, no tail current, no snubber needed.
650 V / 12 A — where it lands on the power rail
Rated 650 V reverse and 12 A forward average, this diode fits the boost stage of a 400 VDC-bus PFC converter in the 1–2 kW range. The 650 V rating gives 250 V of headroom above the nominal bus — margin for line transients and ring on the switch node. Forward voltage is 1.8 V max at 12 A, 25 °C junction. That sets the conduction loss floor at about 22 W at full rated current — the thermal design must pull that heat out through the TO-263-2 exposed pad. Junction temperature range is -55 °C to 175 °C, the high-temperature ceiling typical of SiC. The 175 °C limit lets the diode run hotter than a 150 °C silicon part, shrinking the heatsink for the same power loss.
Package and thermal path
Supplied in a TO-263-3 (D²Pak) surface-mount package, supplier code PG-TO263-2. The large tab is the cathode and the primary thermal path — PCB copper area under the tab sets the junction-to-ambient thermal resistance. A 2 oz copper pour of at least 600 mm² is typical for this current level. Capacitance is 360 pF at 1 V reverse bias, 1 MHz — relevant for estimating switching losses at light load and for EMI filter design.
Lifecycle and supply posture
Product status is Active per Infineon's current lifecycle record. ROHS3 compliant.