Zero reverse recovery — the switching-loss killer
The IDK12G65C5XTMA2 is a 650 V, 12 A SiC Schottky diode from Infineon's CoolSiC™+ series. Its zero reverse recovery time (trr=0 ns) eliminates the switching loss that plagues silicon ultrafast diodes in hard-switched topologies — no recovery charge to sweep out, no tail current, no snubber needed.
650 V / 12 A — where it lands on the power rail
Rated 650 V reverse and 12 A forward average, this diode fits the boost stage of a 400 VDC-bus PFC converter in the 1–2 kW range. The 650 V rating gives 250 V of headroom above the nominal bus — margin for line transients and ring on the switch node. Forward voltage is 1.8 V max at 12 A, 25 °C junction. The 175 °C limit lets the diode run hotter than a 150 °C silicon part, shrinking the heatsink for the same power loss.
Supplied in a TO-263-3 (D²Pak) surface-mount package, supplier code PG-TO263-2. A 2 oz copper pour of at least 600 mm² is typical for this current level. Capacitance is 360 pF at 1 V reverse bias, 1 MHz — relevant for estimating switching losses at light load and for EMI filter design.
Product status is Active per Infineon's current lifecycle record. ROHS3 compliant.