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Infineon Technologies IDK10G65C5XTMA2
Infineon Technologies

Infineon IDK10G65C5XTMA2 CoolSiC™+ SiC Schottky Diode

MPNIDK10G65C5XTMA2
End of Life

Infineon CoolSiC™+ IDK10G65C5XTMA2, SiC Schottky diode, 650 V reverse voltage, 10 A average rectified current, zero reverse recovery time (trr=0 ns), PG-TO263-2 surface-mount package.

$4.53Ref. price · indicative, final on quote
IDK10G65C5XTMA2 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IDK10G65C5XTMA2 Technical Specifications
ParameterValue
SeriesCoolSiC™+
Mounting typeSurface Mount
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.8 V @ 10 A
Current - average rectified10A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologySiC (Silicon Carbide) Schottky
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Capacitance @ vr, f300pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

Zero-recovery SiC Schottky for hard-switched power stages

The Infineon IDK10G65C5XTMA2 is a 650 V, 10 A SiC Schottky diode from the CoolSiC™+ generation, packaged in a PG-TO263-2 surface-mount case.

650 V blocking, 10 A forward — the PFC sweet spot

With a maximum forward voltage of 1.8 V at 10 A and a junction temperature range from -55°C to 175°C, this diode handles the thermal stress of a 3 kW-class PFC stage without derating at the top end. The 300 pF capacitance at 1 V is low enough to keep the capacitive turn-on loss small in a 100 kHz hard-switched bridge.

Active production, ROHS3, tape-and-reel ready

The PG-TO263-2 footprint is shared with other CoolSiC™+ 10 A parts, so a BOM swap within the family keeps the PCB layout unchanged.

Frequently asked questions

What is the reverse recovery time for IDK10G65C5XTMA2?

The reverse recovery time (trr) is 0 ns — a SiC Schottky diode has no stored charge to sweep out, so the recovery current is purely capacitive and completes in the same switching edge as the turn-off. This eliminates the switching loss tail that a silicon ultrafast diode would add at every hard commutation.