The IDK06G65C5XTMA2 is a 650 V, 6 A SiC Schottky diode from Infineon's CoolSiC™+ family. Its zero reverse recovery time (trr = 0 ns) eliminates the diode reverse-recovery charge that drives turn-on loss in hard-switched topologies — PFC boost stages, LLC converters, and inverter freewheel paths see the biggest efficiency gain.
650 V, 6 A — room to breathe in the power stage
Rated for 650 V DC reverse and 6 A average forward current, this diode fits 400 V bus PFC stages and 350–400 V DC-link applications with healthy derating margin. The forward voltage drop is 1.8 V max at 6 A and 25 °C junction — the conduction loss is set by that Vf × Io product, and it rises with temperature per the SiC curve. Reverse leakage at rated voltage is 1.1 mA at 650 V — typical for a 6 A SiC Schottky, but worth checking against the thermal budget in high-ambient enclosures where leakage doubles with every 10 °C rise.
175 °C junction — high-temp environments covered
That 175 °C ceiling suits designs where the diode sits near hot magnetics or in a sealed PSU enclosure — onboard chargers, server power supplies, industrial motor drives. The part is ROHS3 compliant and can be designed into new production without obsolescence risk.
TO-263-3 package — rework and thermal note
Housed in a PG-TO263-2 (D²Pak, TO-263-3) surface-mount package with an exposed metal tab. The tab is the cathode and the primary thermal path — the board copper area under it sets the junction-to-ambient thermal resistance. Rework with a hot-air station at 300–340 °C, preheat the board to 150 °C to avoid lifting the pad on a thick-copper power plane. Input capacitance is 190 pF at 1 V reverse bias and 1 MHz — low enough that the gate-driver sees negligible capacitive load on the switching node.