1.2 kV SiC Schottky with zero reverse-recovery — the switching-loss killer
The IDK05G120C5XTMA1 is Infineon's CoolSiC™+ generation silicon carbide Schottky diode, rated for a 1200 V DC reverse voltage and 19.1 A average rectified forward current. The headline spec that makes this part a drop-in upgrade over a fast-recovery silicon diode is the zero reverse-recovery charge — listed as No Recovery Time > 500 mA — which means the diode does not store minority carriers. In a hard-switched PFC or inverter leg, that eliminates the reverse-recovery current spike that costs switching loss and rings up EMI in a Si FRED.
Forward drop and junction temperature — the thermal budget
That is the conduction loss reference for a typical operating point — at 19.1 A the Vf will be higher, but the 5 A point is where most continuous-load designs will size their average current. The junction temperature range runs from -55°C to 175°C, which is the full SiC temperature envelope. The 175°C maximum allows the die to run hotter than a 150°C Si junction, which buys margin in a tightly packed power stage where the ambient around the diode is elevated by nearby magnetics and MOSFETs.
Package and mounting — the TO-263 footprint
The part ships in a TO-263-3 (D²Pak) surface-mount package, supplier device code PG-TO263-2-1. This is a standard D²Pak footprint with a large exposed tab on the back side — the tab is the cathode connection and the primary thermal path. The board layout must provide a copper pad and thermal vias under the tab to pull heat into the inner-layer planes.
It is listed as ROHS3 compliant, so no exemption-based restrictions on lead or other substances.