SiC Schottky with zero recovery — the switching-loss killer
The Infineon IDH20G65C6XKSA1 is a 650 V, 41 A Silicon Carbide Schottky diode in a TO-220-2 through-hole package. Its defining characteristic is zero reverse recovery time (0 ns trr) — no stored charge to sweep out, which means the switching loss in a hard-switched converter is limited to the junction capacitance alone, not a Qrr tail.
650 V blocking, 41 A forward — where it fits
With a 650 V DC reverse voltage rating and 41 A average rectified current, this diode is sized for the output stage of a 400 V bus PFC boost converter or the secondary side of a high-voltage DC-DC stage. The 1.35 V forward voltage at 20 A (Vf max) is typical for a SiC Schottky of this current class — the conduction loss is higher than a comparable ultrafast silicon diode, but the switching loss saving more than compensates above 50 kHz. The 67 µA reverse leakage at 420 V and 970 pF capacitance at 1 V are the two parameters that set the no-load dissipation and the capacitive switching loss respectively. At light load the leakage dominates; at full load the Vf × If product sets the junction temperature.
175 °C junction — no derating compromise
The wide temperature range means the same BOM can be qualified across industrial and automotive programs without a second temperature-grade variant.
ROHS3 compliant.