1200 V / 56 A — where this SiC Schottky fits
The Infineon IDH20G120C5XKSA1 is a CoolSiC™+ generation silicon carbide Schottky diode rated for 1200 V DC reverse voltage and 56 A average rectified current. It is designed for the boost stage of power-factor-correction circuits, solar inverter DC-DC stages, and high-voltage flyback converters where silicon ultrafast diodes hit their reverse-recovery ceiling.
Zero reverse recovery — what it means for switching losses
The datasheet lists reverse recovery time (trr) as 0 ns and the speed descriptor as No Recovery Time > 500 mA (Io). This eliminates the reverse-recovery current spike in hard-switched converters.
Forward drop and thermal budget
At 20 A forward current the maximum forward voltage is 1.8 V. The 56 A DC rating is a package-limited average; actual current capability in a real design is set by junction temperature, which is rated from -55°C to 175°C. The 1050 pF capacitance at 1 V, 1 MHz is the junction capacitance the switching node sees — relevant for ringing and snubber design in fast-switching GaN or SiC MOSFET stages.
Package and mounting — TO-220-2
The part comes in a PG-TO220-2-1 package — a two-pin through-hole TO-220 with the tab as the cathode. The tube shipment is standard for this form factor. The single-screw mounting hole accepts a heatsink; the junction-to-case thermal resistance determines the derating. At 175°C max junction, adequate heatsinking is mandatory for continuous 56 A operation.
Lifecycle and supply posture
It is ROHS3 compliant.