Why zero reverse recovery matters in a 16 A SiC Schottky
The IDH16S60CAKSA1: Its zero reverse recovery time (0 ns trr) eliminates the switching losses that plague ultrafast silicon diodes in hard-switched PFC, boost, and inverter stages.
Current and voltage — sizing the load budget
With a 16 A average rectified current rating and a forward voltage drop of 1.7 V at that current, conduction loss at rated load is about 27 W. The 600 V reverse blocking voltage, combined with a 175°C maximum junction temperature, gives headroom for derating in high-ambient or forced-air designs. Reverse leakage is 200 µA at 600 V, typical for a 16 A SiC Schottky — negligible at room temperature but worth budgeting in the thermal calculation above 125°C.
Package and thermal path
Housed in a PG-TO220-2-2 through-hole package, the diode's cathode tab is the primary thermal path. The 650 pF junction capacitance at 1 V, 1 MHz is low enough to keep switching edges clean in a 100 kHz PFC stage without excessive ringing.