Skip to main content
Infineon Technologies IDH12SG60CXKSA2
Infineon Technologies

Infineon IDH12SG60CXKSA2 SiC Schottky Diode, 600 V 12 A

MPNIDH12SG60CXKSA2
End of Life

Infineon CoolSiC™+ IDH12SG60CXKSA2, SiC (Silicon Carbide) Schottky diode, 600 V DC reverse, 12 A average rectified, zero reverse recovery time, TO-220-2 through-hole package.

$6.85Ref. price · indicative, final on quote
IDH12SG60CXKSA2 datasheet
PackagingTO-220-2
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IDH12SG60CXKSA2 Technical Specifications
ParameterValue
SeriesCoolSiC™+
Mounting typeThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.1 V @ 12 A
Current - reverse leakage @ vr100 µA @ 600 V
Current - average rectified12A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTube
TechnologySiC (Silicon Carbide) Schottky
CaseTO-220-2
Capacitance @ vr, f310pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

Zero-recovery SiC Schottky for hard-switched stages

The IDH12SG60CXKSA2 is an Infineon CoolSiC™+ silicon-carbide Schottky diode rated for 600 V DC reverse and 12 A average rectified current. Its defining characteristic is a reverse recovery time (trr) of 0 ns — there is no stored charge to sweep out during turn-off, so switching losses in a hard-switched PFC or inverter stage are limited to the output capacitance discharge only.

Forward drop and leakage at the junction limit

Maximum forward voltage is 2.1 V at 12 A, 25 °C junction — the conduction loss floor for a 12 A load. Reverse leakage at 600 V is 100 µA maximum; this leakage doubles with junction temperature and sets the standing loss in the off-state.

Package and mounting — TO-220-2 through-hole

Supplied in a TO-220-2 through-hole package (PG-TO220-2-1), shipped in tube form. The two-lead format eliminates the centre-tab sense pin of a TO-220-3, simplifying the PCB layout for a single-diode boost or PFC stage. The 310 pF capacitance at 1 V reverse bias is the output capacitance that the driver charges and discharges each switching cycle — relevant for calculating the capacitive switching loss at high frequency.

Frequently asked questions

What is the reverse recovery time of IDH12SG60CXKSA2?

The reverse recovery time (trr) is 0 ns — a SiC Schottky diode has no stored minority charge, so there is no recovery current spike during turn-off. This eliminates the switching loss component associated with reverse recovery in a hard-switched topology.

Is IDH12SG60CXKSA2 RoHS compliant?

Yes, the part is ROHS3 compliant per the manufacturer's status record.