Zero-recovery SiC Schottky for hard-switched stages
The IDH12SG60CXKSA2 is an Infineon CoolSiC™+ silicon-carbide Schottky diode rated for 600 V DC reverse and 12 A average rectified current.
Forward drop and leakage at the junction limit
Maximum forward voltage is 2.1 V at 12 A, 25 °C junction — the conduction loss floor for a 12 A load. Reverse leakage at 600 V is 100 µA maximum; this leakage doubles with junction temperature and sets the standing loss in the off-state.
Package and mounting — TO-220-2 through-hole
Supplied in a TO-220-2 through-hole package (PG-TO220-2-1), shipped in tube form. The two-lead format eliminates the centre-tab sense pin of a TO-220-3, simplifying the PCB layout for a single-diode boost or PFC stage. The 310 pF capacitance at 1 V reverse bias is the output capacitance that the driver charges and discharges each switching cycle — relevant for calculating the capacitive switching loss at high frequency.