650 V, 27 A SiC Schottky — zero-recovery switching for PFC and boost stages
It is part of the CoolSiC generation 6 family, designed for hard-switching power conversion where silicon ultrafast diodes incur recovery losses. The zero reverse recovery time (trr = 0 ns) eliminates the reverse-recovery charge that drives turn-on losses and ringing in silicon diodes. This makes the part a direct fit for continuous-conduction-mode PFC, boost converters, and solar inverter freewheeling paths where switching frequency exceeds 50 kHz.
Junction temperature range and thermal budget for high-reliability designs
The wide Tj envelope also provides margin for overload transients in industrial motor drives. Reverse leakage is 40 µA at 420 V reverse bias. Capacitance measures 594 pF at 1 V, 1 MHz — a figure that influences switching losses at light load.
The part is ROHS3 compliant.