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Infineon Technologies IDH12G65C6XKSA1
Infineon Technologies

Infineon IDH12G65C6XKSA1 SiC Schottky Diode

MPNIDH12G65C6XKSA1
End of Life

Infineon CoolSiC IDH12G65C6XKSA1, Silicon Carbide Schottky diode, 650 V reverse voltage, 27 A average rectified current, zero reverse recovery time, TO-220-2 through-hole package, -55°C to 175°C junction temperature.

$5.17Ref. price · indicative, final on quote
IDH12G65C6XKSA1 datasheet
PackagingTO-220-2
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IDH12G65C6XKSA1 Technical Specifications
ParameterValue
Mounting typeThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.35 V @ 12 A
Current - reverse leakage @ vr40 µA @ 420 V
Current - average rectified27A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTube
TechnologySiC (Silicon Carbide) Schottky
CaseTO-220-2
Capacitance @ vr, f594pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

650 V, 27 A SiC Schottky — zero-recovery switching for PFC and boost stages

The Infineon IDH12G65C6XKSA1 is a 650 V, 27 A Silicon Carbide Schottky diode in a TO-220-2 through-hole package. It is part of the CoolSiC generation 6 family, designed for hard-switching power conversion where silicon ultrafast diodes incur recovery losses. The zero reverse recovery time (trr = 0 ns) eliminates the reverse-recovery charge that drives turn-on losses and ringing in silicon diodes. This makes the part a direct fit for continuous-conduction-mode PFC, boost converters, and solar inverter freewheeling paths where switching frequency exceeds 50 kHz.

Junction temperature range and thermal budget for high-reliability designs

The wide Tj envelope also provides margin for overload transients in industrial motor drives. Forward voltage is specified at 1.35 V maximum at 12 A forward current. Reverse leakage is 40 µA at 420 V reverse bias. Capacitance measures 594 pF at 1 V, 1 MHz — a figure that influences switching losses at light load.

The part is ROHS3 compliant.

Frequently asked questions

What is the reverse recovery time of IDH12G65C6XKSA1?

The reverse recovery time (trr) is 0 ns. As a SiC Schottky diode, it has no stored minority carriers, so there is no reverse recovery charge. This eliminates the switching loss and EMI that a silicon ultrafast diode would produce at turn-off.

Is IDH12G65C6XKSA1 compatible with TO-220-2 footprint?

Yes. The supplier device package is PG-TO220-2, which is the standard TO-220-2 footprint. The through-hole mounting type and package case match the industry-standard TO-220-2 outline for power diodes.