SiC Schottky — zero-recovery switching for hard-switched rails
The IDH10G65C6XKSA1 is a 650 V, 24 A silicon carbide Schottky diode in a TO-220-2 through-hole package. The zero reverse recovery time (trr = 0 ns) eliminates the switching loss tail in hard-switched topologies.
What the zero trr means for your switching losses
With zero reverse recovery time, the IDH10G65C6XKSA1 does not generate the current spike or the associated power dissipation that a silicon diode of similar voltage and current rating would at every turn-off. In a 100 kHz boost converter, that difference can cut diode losses by 60–70 % compared to a 650 V silicon ultrafast part, letting you run the same heatsink at a lower temperature or shrink the heatsink entirely. The forward voltage is 1.35 V maximum at 10 A, which is higher than a silicon Schottky at low current but the trade-off pays off at high frequency because the switching loss dominates. The 495 pF capacitance at 1 V, 1 MHz is typical for a 650 V SiC die of this current class and sets the drive current needed from the gate driver in a synchronous rectifier stage.
Through-hole TO-220-2 — field-swappable, no hot-air needed
The TO-220-2 package (PG-TO220-2) is a two-lead through-hole part with the tab as the cathode. On a rework bench or in a field repair kit, this is a socket-friendly part — no hot-air station needed.